Samsung’s next-gen 400-layer V-NAND will be able to store more data and will boast higher reliability for advanced storage solutions.
Samsung to increase the memory cells drastically for the next-gen and is aiming for up to 1000 layers in the future, 400-layer V-NAND with vertical bonding coming soon
A month ago, the semiconductor giant Samsung started its mass production of the QLC 9th gen V-NAND, which aims to enhance the performance, storage capacity, and reliability of the next-gen storage solutions. A recent report from the Korean Economic Daily suggests that Samsung has already planned to reach even higher performance with the future V-NAND technology.
The company is said to launch its next-gen V-NAND in 2026. This is the 10th gen V-NAND, which is reportedly going to feature a 400-layer configuration, exceeding the current 9th gen V-NAND by 120 layers. This is a straight 43% layer increase in a single-gen, which is far higher than the gap between the layer count in 8th-gen vs 9th-gen V-NAND (236 vs 280 layers).
To achieve such a high number of layers, Samsung will implement the Bonding Vertical(BV) NAND technology, which will be different from the current CoP(Circuit on Periphery) design. The CoP design has the peripheral circuits on top of the memory stack, while the vertical bonding method will start with separate manufacturing of the storage and peripheral circuits, followed by the vertical bond.
Not only will this help Samsung reach higher capacity, but will also help it reduce circuit damage during the…
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